Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors

By M. Rickelt, H. Rein, E. Rose. 2001

155 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3d87f494888427ed4a811b00adae998f0ef2b1dd