An electrically pumped germanium laser.
By R. Camacho-Aguilera, Yan Cai, N. Patel, J. Bessette, M. Romagnoli, Lionel C. Kimerling, Jürgen Michel. Optics Express, 2012
722 citations recorded by the source corpus.
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/3d1124dc8854c81fd9994d87457074117e4701be
How researchers see this paper
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In Atomic and Molecular Physics, and Optics
- Lukas Chrostowski
- Lionel C. Kimerling
- Michael Hochberg
- T. Baehr‐Jones
- Anuradha Murthy Agarwal
- D. Thomson
- Karen C. Cheung
- D. van Thourhout
In Electrical and Electronic Engineering
- Lukas Chrostowski
- Michael Hochberg
- Lionel C. Kimerling
- D. Thomson
- Frederic Y. Gardes
- M. Pant
- T. Baehr‐Jones
- Anuradha Murthy Agarwal
Citations in the corpus
- Silicon Photonics: The Next Fabless Semiconductor Industry (2013, positive): “The small difference (134 meV) between the indirect and direct band gaps can be overcome by a combination of strain and heavy n-type doping, and recently [61] the first electrically driven laser using a germanium gain medium on silicon was demonstrated [10].”
- Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon (2014, background): “the recent promising demonstration of an optically pumped germanium laser [4], [5].”
- Silicon Photonic Biosensors Using Label-Free Detection (2018, background): “Electrically-pumped Ge lasers integrated on Si, however, have been demonstrated [228].”
- Silicon Photonic Integration Platform—Have We Found the Sweet Spot? (2014, neutral): “sources using Ge or doped silicon [38], [39], a commercially viable laser based on group IV materials is still a distant prospect.”
- Mid-infrared integrated photonics on silicon: a perspective (2017, background): “At the telecom band, heteroepitaxial growth has culminated in electrically pumped laser sources on Si based on n-doped Ge [116] and InAs/GaAs quantum dots [117].”
- Integrated Source of Spectrally Filtered Correlated Photons for Large-Scale Quantum Photonic Systems (2014, background): “Together with previous realizations of (i) integrated laser sources [24–30], (ii) on-chip sources of quantum states of light [17,19–21,31–40], (iii) on-chip quantumstate manipulation [1,6,41–46], and (iv) on-chip singlephoton detection [47–52], our work addresses the challenge of integrating single-”