Improved performance of the LHCb Outer Tracker in LHC Run 2
By P. d’Argent, A. Pellegrino, S. Bachmann, M. Szczekowski, F. Archilli, A. Birnkraut, M. Cian, T. Schmelzer, B. Rachwal, J. A. Vries and 29 more. 2017
198 citations recorded by the source corpus.
The LHCb Outer Tracker is a gaseous detector covering an area of 5 × 6 m2 with 12 double layers of straw tubes. The performance of the detector is presented based on data of the LHC Run 2 running period from 2015 and 2016. Occupancies and operational experience for data collected in pp, pPb and PbPb collisions are described. An updated study of the ageing effects is presented showing no signs of gain deterioration or other radiation damage effects. In addition several improvements with respect to LHC Run 1 data taking are introduced. A novel real-time calibration of the time-alignment of the detector and the alignment of the single monolayers composing detector modules are presented, improving the drift-time and position resolution of the detector by 20%. Finally, a potential use of the improved resolution for the timing of charged tracks is described, showing the possibility to identify low-momentum hadrons with their time-of-flight.
Subfields: Nuclear and High Energy Physics, Radiation
View Paper: https://www.semanticscholar.org/paper/3d08359da30405ac5dee133a4fbff2fe39466763
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Citations in the corpus
- Amplitude analysis of the B+→D+D−K+ decay (2020, methodology): “The detector includes a high-precision tracking system consisting of a silicon-strip vertex detector surrounding the pp interaction region [20], a large-area silicon-strip detector located upstream of a dipole magnet with a bending power of about 4 Tm, and three stations of silicon-strip detectors a”
- Measurement of the W boson mass (2021, unknown): “The detector includes a high-precision tracking system consisting of a silicon-strip vertex detector surrounding the proton-proton (pp) interaction region [23], a large-area silicon-strip detector located upstream of a dipole magnet with a bending power of about 4 Tm, and three stations of silicon-s”