High Band Degeneracy Contributes to High Thermoelectric Performance in p‐Type Half‐Heusler Compounds

By C. Fu, Ting Zhu, Y. Pei, Hanhui Xie, Heng Wang, G. J. Snyder, Y. Liu, Yintu Liu, Xinbing Zhao. 2014

312 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3d00a15b98c3ccaf3c9b83961d74d4016ff58002

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Xun Shi
2. C. Uher
3. Lidong Chen
4. Ting Zhu
5. C. Fu
6. Jian He
7. Claudia Felser
8. Y. Pei

In Materials Chemistry

1. Lidong Chen
2. Xun Shi
3. C. Uher
4. Jian He
5. Ting Zhu
6. T. Tritt
7. C. Fu
8. Y. Pei

Citations in the corpus

• Strong phonon softening and avoided crossing in aliovalence-doped heavy-band thermoelectrics (2023, methodology): “In contrast, isoelectronic alloying is a more commonly used strategy to reduce the κ L value by introducing point-defect scattering 18,19 , especially for heavy-band HH compounds 20–22 .”
• Band and scattering tuning for high performance thermoelectric Sn1−xMnxTe alloys (2015, background): “Demonstrated strategies are typified by the high band degeneracy through band convergence in PbTe [21], Mg2Si [22,23] and half-Heusler [3,24] alloys, and by the resonant doping [20,25e28].”
• Recent advances in high-performance bulk thermoelectric materials (2016, methodology): “8 at 900 K.(202) A Hafnium-free, FeNbSb-based nanostructured HH compound was synthesised by arc melting, BM and hot pressing resulting in a zT of 1 at 973 K.”