Reversible fluorination of graphene: Evidence of a two-dimensional wide bandgap semiconductor
By S. Cheng, Ke Zou, F. Okino, H. R. Gutierrez, Awnish K. Gupta, Ning Shen, Peter C. Eklund, J. Sofo, Jun Zhu. 2010
357 citations recorded by the source corpus.
We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding $10\text{ }\text{G}\ensuremath{\Omega}$ at room temperature. Electron transport in graphene fluoride is well described by variable range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than $100\text{ }\text{k}\ensuremath{\Omega}$ at room temperature. Our approach provides a pathway to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/3cf2fbb32f77f999826f9473a52813cdd6d56130
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Electronic properties of mesoscopic graphene structures: Charge confinement and control of spin and charge transport (2011, background): “Besides hydrogenation, graphene may be subjected to fluorination in order to produce fluoridated graphene [68–72].”
- Nobel Lecture: Graphene: Materials in the Flatland (2011, background): “…way to open a gap in the spectrum of quasiparticles in graphene is to use chemically modified graphene (Worsley et al., 2007; Elias et al., 2009; Cheng et al., 2010; Nair et al., 2010a; Withers et al., 2010), where the electrons are participating in the covalent bond with foreign atoms attached…”