Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures

By M. D. Boer, H. Gardeniers, H. Jansen, Edwin Smulders, M. Gilde, G. Roelofs, Jay N. Sasserath, M. Elwenspoek. 2002

266 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/3c92425778449f98fdc7ff677329c5d2ef535d5f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. B. Cho
2. Ghenadii Korotcenkov
3. George M. Whitesides
4. Eric M. Yeatman
5. Giovanni Neri
6. G. Vladisavljević
7. Demetri Psaltis
8. Zhenyu Li

In Mechanics of Materials

1. Ghenadii Korotcenkov

Citations in the corpus

• Surface tension-powered self-assembly of microstructures - the state-of-the-art (2003, methodology): “Etching of extremely deep structures is now well understood, both using the cyclic etch-passivate DRIE process [34] and with the alternative cryogenic DRIE process [35].”
• Silicon Porosification: State of the Art (2010, methodology): “319 , 320 The Bosch process utilizes a separate passivation step followed by an etching step, while in the cryo process the passivation occurs simultaneously with the etching.”