Structural properties of the graphene-SiC(0001) interface as a key for the preparation of homogeneous large-terrace graphene surfaces

By C. Riedl, U. Starke, J. Bernhardt, M. Franke, K. Heinz. 2007

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Growth of Epitaxial Graphene: Theory and Experiment (2014, background): “This layer has a honeycomb lattice structure with a (6 √ 3 × 6 √ 3)R30° reconstruction [52] involving the formation of strong C-Si bonds [53], thus not exhibiting the electronic properties typical of graphene [300].”
Production and processing of graphene and related materials (2020, methodology): “The key to achieve large area 1LG on SiC is to (a) understand the role of the buffer layer [590, 592, 610] and of the step bunching [607] which takes place during its formation and to monitor the effect of (b) T (in the range 1700 °C–1950 °C); (c) Ar pressure (in the range 750–950 mbar) (d) and grow”
Manipulating the electronic and chemical properties of graphene via molecular functionalization (2013, background): “Single- and few-layer single crystalline graphene can also be grown epitaxially on single crystal metal substrates via thermal decomposition of hydrocarbons, or on single crystalline or polycrystalline SiC via segregation of carbon atoms during high temperature annealing [10–18].”
Raman spectroscopy and imaging of graphene (2008, methodology): “the appearance of single layer EG can be determined by monitoring the phase evolution from carbon nanomesh to graphene by in-situ STM during the thermal annealing of SiC. [76, 79 ] However,”