Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact

By B. Jonker, G. Kioseoglou, Aubrey T. Hanbicki, Cheng Li, P. Thompson. 2007

337 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3a58eb068167c1f34d39431356e0e37371923127

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. Weng
2. M. Wu
3. Jian‐Hua Jiang

In Electrical and Electronic Engineering

1. M. Weng
2. M. Wu
3. Jian‐Hua Jiang
4. K. Rumpf
5. P. Granitzer

Citations in the corpus

• Spin dynamics in semiconductors (2010, background): “The radiative relaxation time in SiGe quant um well is about tens of nanoseconds [279] compared to hundreds of microseconds in silicon [282, 1067, 1068].”
• Porous Silicon—A Versatile Host Material (2010, background): “promising for spin-injection experiments from the ferromagnetic metals into bulk-silicon [118,119].”