Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

By Haiyang Peng, Gongping Li, J. Ye, Zhipeng Wei, Zecen Zhang, D. D. Wang, G. Xing, Tom Wu. 2010

181 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/3a3a9e6f53cce80bde3f8eab5c474e633d3e65e2

How researchers see this paper

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1. M. Al-Qutayri
2. B. Mohammad
3. Dirar Mohammad Al Homouz
4. Heba Abu Nahla
5. Vikas Kumar
6. M. A. Jaoude
7. N. Christoforou

Citations in the corpus

• State of the art of metal oxide memristor devices (2016, background): “The possible implication of the electrode area is assumed on distinguishing two different geometrical localizations of the switching event: (i) the single filament model and (ii) the area-distributed switching [11, 80].”