19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

By I. Repins, M. Contreras, B. Egaas, C. Dehart, J. Scharf, C. Perkins, B. To, R. Noufi. 2008

2,018 citations recorded by the source corpus.

We report a new record total‐area efficiency of 19·9% for CuInGaSe2‐based thin‐film solar cells. Improved performance is due to higher fill factor. The device was made by three‐stage co‐evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented. Published in 2008 by John Wiley & Sons, Ltd.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/399fb0f32c4e95a68a5cf200eacd92e6532264a3

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Citations in the corpus

Solar photovoltaic electricity: Current status and future prospects (2011, background): “The world-record efficiency of almost 20% (the highest value for thin-film cells) on a CIGS cell was achieved at NREL (Ramanathan et al., 2003; Repins et al., 2008).”
Ink formulation and low‐temperature incorporation of sodium to yield 12% efficient Cu(In,Ga)(S,Se)2 solar cells from sulfide nanocrystal inks (2013, background): “Among all the absorber materials for thin film PV technologies, copper indium gallium diselenide, Cu(In,Ga)Se2 or CIGSe, is one of the most promising candidates because of its ideal band gap and the demonstrated high power conversion efficiencies (PCE) both at the lab and module scales [1,2].”
Solar cell efficiency tables (version 41) (2013, background): “2 NREL (4/09) NREL, on glass [24] CIGS (submodule) 17.”