High performance bilayer-graphene terahertz detectors
By Davide Spirito, D. Coquillat, S. Bonis, Antonio Lombardo, M. Bruna, Andrea C. Ferrari, V. Pellegrini, A. Tredicucci, Wojciech Knap, Miriam S. Vitiello. 2013
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We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity ∼1.2 V/W (1.3 mA/W) and a noise equivalent power ∼2 × 10−9 W/√Hz in the 0.29–0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.
Subfields: Astronomy and Astrophysics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/395e91f92bb7e6c30254799925ad379a34fb2266
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Citations in the corpus
- Electronic properties of graphene-based bilayer systems (2015, background): “al parameters it can demonstrate better performance than the detectors of other types. The experimental realization of a photodetector working in the terahertz range was reported by D. Spirito et al. [203]. Experimental realizations of pn-junctions and related heterostructures have been described in”