Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits

By I. Filanovsky, A. Allam. 2001

575 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/380b8d3953abf3b9de819a430f107bd41658cddb

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. G. Iannaccone

In Electrical and Electronic Engineering

1. G. Iannaccone

Citations in the corpus

• A 300 nW, 15 ppm/$^{\circ}$C, 20 ppm/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs (2009, background): “where is the mobility at temperature , and is the mobility temperature exponent [18].”
• A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference (2011, background): “As shown in (3), it is usually assumed that decreases linearly with temperature [16]:”