Carrier transport in two-dimensional graphene layers.

By E. Hwang, S. Adam. Physical Review Letters, 2006

1,050 citations recorded by the source corpus.

Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by random charged impurity centers with density n(i). Excellent quantitative agreement is obtained (for carrier density n>10(12) cm(-2)) with existing experimental data. The conductivity scales linearly with n/n(i) in the theory. We explain the experimentally observed asymmetry between electron and hole conductivities, and the high-density saturation of conductivity for the highest mobility samples. We argue that the experimentally observed saturation of conductivity at low density arises from the charged impurity induced inhomogeneity in the graphene carrier density which becomes severe for n less, similarn(i) approximately 10(12) cm(-2).

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3770d49d7a80c88a1af060e9b85bc9a86dd21476

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

  1. K. Novoselov
  2. N. M. R. Peres
  3. Francisco Guinea
  4. A.K. Geim
  5. E. Hwang
  6. E. Rossi
  7. S. Adam
  8. Feng Wang

In Biomedical Engineering

  1. K. Novoselov
  2. Francisco Guinea
  3. E. Hwang
  4. Feng Wang
  5. E. Rossi
  6. Yuanbo Zhang
  7. S. Adam
  8. A. Mahmood

In Materials Chemistry

  1. K. Novoselov
  2. N. M. R. Peres
  3. A.K. Geim
  4. Francisco Guinea
  5. E. Hwang
  6. S. Adam
  7. E. Rossi
  8. M. Katsnelson

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