Angular-dependent oscillations of the magnetoresistance in Bi 2 Se 3 due to the three-dimensional bulk Fermi surface

By K. Eto, Z. Ren, A. Taskin, K. Segawa, Y. Ando. 2010

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We observed pronounced angular-dependent magnetoresistance (MR) oscillations in a high-quality ${\text{Bi}}_{2}{\text{Se}}_{3}$ single crystal with the carrier density of $5\ifmmode\times\else\texttimes\fi{}{10}^{18}\text{ }{\text{cm}}^{\ensuremath{-}3}$, which is a topological insulator with residual bulk carriers. We show that the observed angular-dependent oscillations can be well simulated by using the parameters obtained from the Shubnikov-de Haas oscillations, which clarifies that the oscillations are essentially due to the bulk Fermi surface. By completely elucidating the bulk oscillations, this result paves the way for distinguishing the two-dimensional surface state in angular-dependent MR studies in ${\text{Bi}}_{2}{\text{Se}}_{3}$ with much lower carrier density. Besides, the present result provides a compelling demonstration of how the Landau quantization of a closed three-dimensional Fermi surface can give rise to pronounced angular-dependent MR oscillations.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/364cf9715c8929105a6117e89ac873118250dce0