Electronic structure and stability of quaternary chalcogenide semiconductors derived from cation cross-substitution of II-VI and I-III-VI2 compounds

By Shiyou Chen, X. Gong, Aron Walsh, Suhuai Wei. 2009

381 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3620ef862ee92b749c76c6e56a443f3ad147220f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Xun Shi
2. Lidong Chen
3. C. Uher
4. C. Hages
5. T. Unold
6. Rakesh Agrawal
7. Jihui Yang
8. C. Miskin

In Electronic, Optical and Magnetic Materials

1. Xun Shi
2. C. Uher
3. Lidong Chen
4. David J. Singh

In Materials Chemistry

1. Lidong Chen
2. Xun Shi
3. C. Uher
4. Wenqing Zhang
5. Jihui Yang
6. C. Hages
7. T. Unold
8. D. Abou‐Ras

Citations in the corpus

• Improved performance of Ge‐alloyed CZTGeSSe thin‐film solar cells through control of elemental losses (2015, background): “5 eV for the S-free Cu2Zn(SnyGe1-y)Se4 (CZTGeSe) absorber [6].”
• On the tuning of electrical and thermal transport in thermoelectrics: an integrated theory–experiment perspective (2016, background): “The valence band structure of binary cubic zinc-blende compounds consists of degenerate Γ5V and Γ4V bands.(16) After the cation cross-substitution into ternary or quaternary compositions with the tetragonal structure, the crystal-field splitting ΔCF= Γ5V− Γ4V and a non-unity structural parameter η= ”