Numerical modeling of CdS/CdTe and CdS/CdTe/ZnTe solar cells as a function of CdTe thickness

By N. Amin, Kamaruzzaman Sopian, M. Konagai. 2007

200 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/35abe4f6ce2b08c155791ade40fd19b769a2c15b

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In Electrical and Electronic Engineering

1. Jamie Speirs
2. R. Gross
3. C. Candelise

Citations in the corpus

• Materials availability for thin film (TF) PV technologies development: A real concern? (2011, background): “Currently CIGS and CdTe absorber layer thicknesses are around 2μm and in the 3-8μm range respectively, but research is underway to reduce thickness to below 1μm [27, 41-43].”
• Implications for CdTe and CIGS technologies production costs of indium and tellurium scarcity (2012, background): “1 mm range to account for potential innovation-led improvements [55,58,59].”