Valley polarization and intervalley scattering in monolayer MoS$_{2}$

By G. Kioseoglou, Aubrey T. Hanbicki, M. Currie, A. Friedman, D. Gunlycke, B. Jonker. 2012

288 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3548a941cbf845326e2ae07f33c54612c696828a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. A. Castellanos-Gómez
2. G. Steele
3. A. Di Bartolomeo
4. Herre S. J. van der Zant

In Electrical and Electronic Engineering

1. A. Castellanos-Gómez
2. A. Di Bartolomeo
3. Herre S. J. van der Zant
4. V. Dravid

In Materials Chemistry

1. A. Castellanos-Gómez
2. G. Steele
3. Herre S. J. van der Zant
4. M. Buscema
5. A. Di Bartolomeo
6. V. Dravid
7. Yong‐Wei Zhang
8. Li-dong Zhao

Citations in the corpus

• The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 (2013, background): “3 of the PL properties of single layer MoS2 has led to the discovery of interesting phenomena such as the control of charged excitons via electrostatic doping and optical control of valley population[11-15].”
• Valley-polarized exciton–polaritons in a monolayer semiconductor (2017, methodology): “This behavior originates from the ratio of the exciton and valley relaxation rates, as predicted by a rate equation model (see Supplementary Information) [19, 22]:”
• Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “The electronic structure of MoS2 also enables valley polarization, which is another important property for new-generation devices [260][261] [262].”