Pentacene organic transistors and ring oscillators on glass and on flexible polymeric substrates
By Hagen Klauk, Marcus Halik, Ute Zschieschang, F. Eder, G. Schmid, C. Dehm. 2003
317 citations recorded by the source corpus.
Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/34635d3769742f3ad99c93b2c77d3b6414c36011
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In Electrical and Electronic Engineering
- Hagen Klauk
- Ute Zschieschang
- Marcus Halik
- C. Voz
- J. Puigdollers
- Antonio F. Facchetti
- David Jiménez
- G. Horowitz
Citations in the corpus
- Flexible organic complementary circuits (2005, methodology): “Prior to device processing, the substrates were preshrunk at a temperature of 200 C to improve their dimensional stability during subsequent processing [25].”
- Accurate modeling and parameter extraction method for organic TFTs (2005, methodology): “Transistors T3 type correspond to devices previously reported in [21], with 120 nm polyvinylphenol (PVP) layer as gate dielectric, 30 nm of pentacene layer, W = 500 lm and L = 50 lm.”
- Effects of grain boundaries, field-dependent mobility, and interface trap States on the electrical Characteristics of pentacene TFT (2004, background): “Currently, a large effort has been focused on the realization of circuits based on organic devices such as inverters, NAND gates and ring oscillators [1].”