Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

By B. Vincent, F. Gencarelli, H. Bender, C. Merckling, B. Douhard, D. H. Petersen, O. Hansen, H. H. Henrichsen, J. Meersschaut, W. Vandervorst and 3 more. 2011

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In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sn contents up to 8%. Those metastable layers stay fully strained after 30 min anneal in N2 at 500 °C; Ge-Sn interdiffusion is seen at 500 °C but not at lower temperature. B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 × 1019 cm−3. GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/345957da0357ee92b2002d099f80c6d91da0d47d