Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions

By G. Kramberger, V. Cindro, I. Mandić, M. Mikuž, M. Zavrtanik. 2002

170 citations recorded by the source corpus.

Silicon diodes fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities (1, 2 and 15 kO cm) were irradiated with neutrons, pions and protons to fluences up to 2:4 � 10 14 n=cm � 2 : Effective trapping times for electrons and holes were determined by the charge correction method in the temperature range between � 501C and 201C: The measured effective trapping probabilities scale linearly with fluence and decrease with increasing temperature. Irradiation with charged hadrons resulted in about 30% higher trapping probabilities than with neutrons at the same equivalent fluence. No dependence on silicon resistivity and oxygen concentration was found. The temperature dependence could be parameterized by a power-law scaling. Accelerated annealing at 601C showed a 30% increase of hole trapping, measured at 101C; and a decrease by about the same amount for electron trapping, both at a time scale of 10 h: r 2002 Elsevier Science B.V. All rights reserved. PACS: 85.30.De; 29.40.Wk; 29.40.Gx

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3436c7caf70fad6a59ea0d051809b3bac0756f59

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

  1. G. Kramberger
  2. V. Cindro
  3. I. Mandić
  4. M. Mikuž
  5. M. Milovanovic
  6. M. Zavrtanik
  7. K. Zagar

Citations in the corpus