Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires

By F. Mireles, G. Kirczenow. 2001

315 citations recorded by the source corpus.

We present numerical calculations of the ballistic spin-transport properties of quasi-one-dimensional wires in the presence of the spin-orbit (Rashba) interaction. A tight-binding analog of the Rashba Hamiltonian which models the Rashba effect is used. By varying the robustness of the Rashba coupling and the width of the wire, weak and strong coupling regimes are identified. Perfect electron spin-modulation is found for the former regime, regardless of the incident Fermi energy and mode number. In the latter however, the spin-conductance has a strong energy dependence due to a nontrivial subband intermixing induced by the strong Rashba coupling. This would imply a strong suppression of the spin-modulation at higher temperatures and source-drain voltages. The results may be of relevance for the implementation of quasi-one-dimensional spin transistor devices.

View Paper: https://www.semanticscholar.org/paper/33cfd434f2014ec7cdf11ef964bff43e118bc03d

Citations in the corpus

• Spintronics: Fundamentals and applications (2004, unknown): “ regime, there are many theoretical studies treating the ballistic case and phase-coherent transport both in F/N and F/N/F junctions (Hu and Matsuyama, 2001; Hu et al., 2001a; Matsuyama et al., 2002; Mireles and Kirczenow, 2001). Simple models in which the N regionis a degeneratesemiconductor often ”