Wafer-scale synthesis and transfer of graphene films.

By Youngbin Lee, S. Bae, Houk Jang, Sukjae Jang, Shou-En Zhu, S. Sim, Y. Song, B. Hong, Jong-Hyun Ahn. Nano letters (Print), 2009

1,140 citations recorded by the source corpus.

We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on Ni and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 +/- 70 and 550 +/- 50 cm(2)/(V s) at drain bias of -0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was approximately 6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3302ec1a9fd7026f2e7d59e52f6ea6b4e68d44a2

How researchers see this paper

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In Biomedical Engineering

  1. Jong-Hyun Ahn
  2. Yongsheng Chen
  3. Soumen Das
  4. S. Seal
  5. S. Khondaker
  6. Daeha Joung

In Electrical and Electronic Engineering

  1. B. Dasari
  2. V. Singh
  3. A. Wee
  4. L. Zhai
  5. Yongsheng Chen
  6. S. Naher
  7. Soumen Das
  8. S. Seal

In Materials Chemistry

  1. Jong-Hyun Ahn
  2. Jianguo Tian
  3. Daeha Joung
  4. B. Dasari
  5. Jiadan Lin
  6. V. Singh
  7. A. Wee
  8. L. Zhai

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