Graphene Doping: A Review
By B. Guo, L. Fang, Baohong Zhang, J. Gong. 2011
284 citations recorded by the source corpus.
Graphene, a new material for the electron-device community, has many extraordinary properties. Especially, it provides a perfect platform to explore the unique electronic property in absolutely two-dimensions. However, most electronic applications are handicapped by the absence of a semiconducting gap in pristine graphene. To control the semiconducting properties of graphene, doping is regarded as one of the most feasible methods. Herein, a brief review is given on the recent research progress of graphene doping, which is roughly divided into three categories: First, the hetero atom doping, including arc discharge, chemical vapor deposition, electrothermal reaction and ion-irradiation approaches; Second, the chemical modification strategy; Third, the method of electrostatic field tuning. In addition, the various potential applications of the above doping methods are also introduced.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/3250fa233f4d8ce9cca1ded809f86582dca24893
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Ryan Beams
- Lukás Novotný
- Julien Perruisseau-Carrier
- Eduardo Carrasco
- Alexander A. Balandin
- Luiz Gustavo Cançado
- A. I. Zhmakin
- A. McGaughey
In Materials Chemistry
- Lukás Novotný
- Ryan Beams
- Xiangfan Xu
- Johan Liu
- J. Hansson
- Julien Perruisseau-Carrier
- Hongbing Lu
- Eduardo Carrasco
Citations in the corpus
- Raman characterization of defects and dopants in graphene (2015, background): “Generally either nitrogen or boron are used due to their similar atomic masses, which leads to n- and pdoping, respectively [89, 91].”
- Reflectarray Antenna at Terahertz Using Graphene (2013, background): “19 eV, which can be achieved via chemical doping or permanent electrostatic bias [12], [13].”
- Graphene related materials for thermal management (2019, background): “The B and N atoms are the natural candidates for doping in graphene because of their similar atomic size as that of C and of their hole acceptor and electron donor characters for substitutional B- and N-doping, respectively [266].”