Engineering shallow spins in diamond with nitrogen delta-doping

By K. Ohno, F. Heremans, L. Bassett, B. Myers, D. Toyli, A. Jayich, C. Palmstrøm, David D. Awschalom. 2012

310 citations recorded by the source corpus.

We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths (d) ranging from 5 to 100 nm display long spin coherence times, T2 > 100 μs at d = 5 nm and T2 > 600 μs at d ≥ 50 nm. The consistently long spin coherence observed in such shallow NV centers enables applications such as atomic-scale external spin sensing and hybrid quantum architectures.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/321dd5c03fd7e7d6d3399215b911641e6d382279

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Long-range spin wave mediated control of defect qubits in nanodiamonds (2017, background): “Similarly, sensing applications are based on the detection of the dipolar fields generated by target spins external to the diamond lattice, calling for the qubits to be positioned within a few nanometers from the surface, where their coherence properties are strongly diminished[9, 10].”
Laser writing of coherent colour centres in diamond (2016, background): “6 thin layer of nitrogen-rich material during growth [30].”
Nitrogen-vacancy centers in diamond: nanoscale sensors for physics and biology. (2014, background): “Alternatively, for bulk crystals, high concentrations of nitrogen can be introduced by ion implantation (23) or by deliberate doping during CVD growth (24).”
Materials challenges and opportunities for quantum computing hardware (2021, background): “For color centers, this is very challenging; incorporation during the growth process bymeans of delta doping allows for localization in depth but not lateral positioning (233, 251), and ion implantation entails a large final distribution (straggle) in the positioning.”
Magnetometry with nitrogen-vacancy defects in diamond (2013, methodology): “This has been demonstrated in a first experiment [92], which achieved a NV layer-thickness of 2 nm at a depth of 5 nm with T2 > 100 μs.”