Defect-related photoluminescence of hexagonal boron nitride

By L. Museur, Feldbach Eduard, A. V. Kanaev. 2008

199 citations recorded by the source corpus.

Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time- and energy-resolved spectroscopy methods. The observed bands are related to donor-acceptor pair transitions, impurities, and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped conduction band electrons and valence band holes. These trapped charges are metastable and their re-excitation with low-energy photons results in anti-Stokes photoluminescence. The comparison of photoluminescence excitation spectra and PSL excitation spectra allows band analysis that supports the hypothesis of Frenkel-type exciton in hBN with a large binding energy.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/319004b83a9fbc66d0af80052c112163f623aace

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Citations in the corpus

• Hexagonal boron nitride is an indirect bandgap semiconductor (2015, result): “[32], but not in previous studies reporting PLE spectroscopy for detection windows centered at defect-related lines [11, 19, 20, 33].”