Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics

By C. Kang, Hag-ju Cho, K. Onishi, R. Nieh, R. Choi, Sundar Gopalan, S. Krishnan, J. Han, Jack C. Lee. 2002

167 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/30efd8a29c7ac7f2bce5d2a5987a0a314ac3be7d