Electrical memory devices based on inorganic/organic nanocomposites

By Tae Whan Kim, Yang Yang, Fushan Li, W. Kwan. 2012

161 citations recorded by the source corpus.

Tae Whan Kim and co-workers review how nanocomposite materials that combine organic and inorganic materials are attractive for use in memory components. A wide variety of structures have been used to store information by switching between two states, making for either volatile or nonvolatile memory systems; well-known examples of both types are random access memory (RAM) and computer hard disks, respectively. Among those, hybrid organic-inorganic devices–such as a polymer matrix in which metal nanoparticles have been incorporated–are easy to make, cost-effective, mechanically flexible, and efficient. Further studies will endeavour to better understand the memories' mechanisms and improve their switching speed and reproducibility. These hybrid structures are particularly promising for the development of flexible memories required to construct the next generation of portable devices.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/3080e2a84071c4b621632bf8795f5ef03567d721