Voltage-Assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers
By Y. Shiota, T. Maruyama, T. Nozaki, T. Shinjo, M. Shiraishi, Yoshishige Suzuki. 2009
189 citations recorded by the source corpus.
Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large perpendicular magnetic anisotropy change in Au(001)/ultrathin Fe80Co20(001)/MgO(001)/polyimide/indium tin oxide (ITO) junctions, and succeeded in realizing a clear switching of magnetic easy axis between in-plane and perpendicular directions. Furthermore, employing a perpendicularly magnetized film, voltage-induced magnetization switching in the perpendicular direction under the assistance of magnetic fields was demonstrated. These pioneering results may open a new window of electric-field controlled spintronics devices.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/304de70395470a7ccf462de674ed9cf17ad3a4fe
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In Atomic and Molecular Physics, and Optics
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Citations in the corpus
- Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, methodology): “Major attention has been paid to VCMA at FM=MgO interfaces and in MTJ, both experimentally (Shiota et al., 2009, 2012; Endo et al., 2010; Nozaki et al., 2010; Seki et al., 2011; Wang et al., 2012) and theoretically (Nakamura et al., 2010; Niranjan et al., 2010; Shimabukuro et al., 2010; Tsujikawa…”