Modeling of compound semiconductors: Analytical bond-order potential for Ga, As, and GaAs

By K. Albe, Kai Nordlund, J. Nord, A. Kuronen. 2002

165 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/302aa7b5327394881dd05cc0c5c2149efa771c53

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Paul Erhart
2. K. Albe
3. Kai Nordlund

In Electrical and Electronic Engineering

1. Paul Erhart
2. Kai Nordlund
3. K. Albe
4. J. Nord
5. Saurav Goel

In Materials Chemistry

1. Paul Erhart
2. K. Albe
3. Kai Nordlund
4. Alexander Stukowski
5. Saurav Goel
6. A. Krasheninnikov

Citations in the corpus

• Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride (2003, methodology): “In the context of the GaAs potential(Albe et al. 2002), however, the cutoff interval for Ga was taken as 2.8–3.1 Å.”