Interference effect on Raman spectrum of graphene on SiO 2 / Si
By D. Yoon, Hyerim Moon, Y. Son, J. Choi, B. Park, Y. H. Cha, Y. D. Kim, H. Cheong. 2009
273 citations recorded by the source corpus.
The intensity ratio between two major Raman bands in graphene is one of the most important information for physics of graphene and has been believed to represent various intrinsic properties of graphene without critical assessment of extrinsic effects. We report a micro Raman spectroscopy study on the Raman intensity ratio of the 2D band to the G Raman band of graphene varying the thickness of dielectric layers (SiO_2) underneath it. The ratio is shown to change by almost 370% when the thickness is varied by 60%. The large variation in the ratio is well explained by theoretical calculations considering multiple Raman scattering events at the interfaces. Our analysis shows that the interference effect is critical in extracting the intrinsic 2D to G intensity ratio and therefore must be taken into account in extracting various physical properties of graphene from Raman measurements.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/301f1a70fab2c5ede6c4549ccc2c2d7aa87e5afc
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In Materials Chemistry
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Citations in the corpus
- Production and processing of graphene and related materials (2020, unknown): “The enhancement factor of I(D) and I(G) was correlated by a multireflection model [1705] with htot, the total distance between SLG and the underlying Si (figure IX.”
- The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 (2013, background): “well known for graphene [9-11] and can be evaluated by calculating an enhancement factor ( ) as the ratio of the emission intensity for 1L in the freestanding case and on the substrate and the emission:”
- Raman Spectroscopic Characterization of Graphene (2010, background): “Normally, the MG can always be deposited on SiO 2 -coated Si substrate ( 1 , 60 , 66 ).”