Achieving high Curie temperature in (Ga,Mn)As
By M. Wang, R. Campion, A. Rushforth, K. Edmonds, C. Foxon, B. Gallagher. 2008
172 citations recorded by the source corpus.
We study the effects of growth temperature, Ga:As ratio, and postgrowth annealing procedure on the Curie temperature TC of (Ga,Mn)As layers grown by molecular beam epitaxy. We achieve the highest TC values for growth temperatures very close to the two-dimensional–three-dimensional phase boundary. The increase in TC, due to the removal of interstitial Mn by postgrowth annealing, is counteracted by a second process, which reduces TC and which is more effective at higher annealing temperatures. Our results show that it is necessary to optimize the growth parameters and postgrowth annealing procedure to obtain the highest TC.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/2f9c24d6df6795603b58d6e06439b7a9906e09e1
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “Staying near the 1:1 stoichiometric As:(Ga+Mn) ratio is favorable for the LTMBE growth of (Ga,Mn)As (Myers et al., 2006; Wang et al., 2008).”
- Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, methodology): “The confirmed magnitude of the Curie temperature TC approaches 190 K in Ga1−xMnxAs (Olejńık et al., 2008; Wang et al., 2008b) and Ge1−xMnxTe (Fukuma et al., 2008; Hassan et al., 2011) with saturation magnetization (in moderate fields, µ0H .”