High-mobility amorphous In2O3-10 wt %ZnO thin film transistors

By B. Yaglioglu, H. Yeom, R. Beresford, D. Paine. 2006

211 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/2f42736e58e4fb49936911feacf694ddd316a4f9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

In Materials Chemistry

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

In Polymers and Plastics

1. Jang Yeon Kwon
2. Jae Kyeong Jeong

Citations in the corpus

• Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors (2015, methodology): “This means that the IZO film can be used as either a transparent conducting electrode or channel layer of TFTs for FPD application [30–33].”