Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

By Jianping Liu, J. Ryou, R. Dupuis, J. Han, G. Shen, Heqing Wang. 2008

143 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2ee60cd620c36f3403856a4d4e3b93ae3210f013

How researchers see this paper

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1. P. D. Yoder
2. Z. Lochner
3. Hyunsoo Kim
4. Russell D. Dupuis

Citations in the corpus

• Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “into lower QWs resulting in nonuniform carrier distributions between QWs induced by impeded hole transport [70], [71]; and Auger recombination [72]–[74].”