ISFET characteristics in CMOS and their application to weak inversion operation

By Pantelis Georgiou, C. Toumazou. 2009

154 citations recorded by the source corpus.

Subfields: Bioengineering, Electrical and Electronic Engineering, Electrochemistry

View Paper: https://www.semanticscholar.org/paper/2ec1e1a23cf2839c84d4c2b2fa06d9abf5341287

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Bioengineering

1. Tor Sverre Lande
2. Nicolas Moser
3. Pantelis Georgiou
4. C. Toumazou

In Electrical and Electronic Engineering

1. Tor Sverre Lande
2. Nicolas Moser
3. Pantelis Georgiou
4. C. Toumazou

In Electrochemistry

1. Tor Sverre Lande
2. Nicolas Moser
3. Pantelis Georgiou
4. C. Toumazou

Citations in the corpus

• ISFETs in CMOS and Emergent Trends in Instrumentation: A Review (2016, methodology): “Although this could be applied externally, several topologies have reported embedded schemes to improve SNR within the analogue front-end, including a global negative current feedback [58], using current mode to perform simple pixel averaging.”