ZnO p-n junction light-emitting diodes fabricated on sapphire substrates

By S. Jiao, Z. Zhang, Y. Lu, D. Shen, B. Yao, Jiying Zhang, Binghui Li, D. Zhao, X. Fan, Zikang Tang. 2006

277 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2e67959fe372964dba94eec8d403b03d2d28beaf

How researchers see this paper

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In Condensed Matter Physics

1. J. Lu
2. Zhiyong Fan
3. Faiz Rahman
4. Pai-chun Chang

In Electronic, Optical and Magnetic Materials

1. J. Lu
2. Zhiyong Fan
3. Faiz Rahman
4. Pai-chun Chang

In Materials Chemistry

1. Zhiyong Fan
2. J. Lu
3. Faiz Rahman
4. Pai-chun Chang

Citations in the corpus

• Zinc oxide light-emitting diodes: a review (2019, background): “In yet another work that was reported in 2006, a multiinstitution research team from China reported the fabrication of homojunction ZnO LEDs through plasma-assisted MBE.(140) For p-ZnO, they used RF-ionized NO as both the oxygen source and the acceptor dopant.”
• Quasi-one-dimensional metal oxide materials—Synthesis, properties and applications (2006, methodology): “Though p-type doping presents a hurdle, progress has been achieved on thin film ZnO p–n junction for light-emitting diode (LED [198,199]) by introducing nitrogen as the p-type dopants.”