First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys

By Suhuai Wei, Shengbai Zhang, Alex Zunger. 2000

415 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2ddb79612f1e91a1947766e598e0abed1ab68f6c

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In Electrical and Electronic Engineering

1. A. Tiwari

In Materials Chemistry

1. A. Tiwari
2. D. Abou‐Ras

Citations in the corpus

• Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cells (2004, background): “Limitations for n-doping are the self-compensation by intrinsic defects such as Cd vacancies, and p-doping suffers from the lack of available dopants with both high solubility and shallow acceptor levels.(59) Moreover, most of the doping atoms have a high mobility and a tendency to segregation in Cd”
• Heterogeneous integration of CdS filters with GaN LEDs for fluorescence detection microsystems (2004, background): “CdS and CdSe form a continuous range of solid solutions via substitution, with little bandgap bowing [11].”