Ab initio theory of gate induced gaps in graphene bilayers

By H. Min, B. Sahu, Sanjay Kumar Banerjee, Allan H. MacDonald. 2006

453 citations recorded by the source corpus.

We study the gate-voltage induced gap that occurs in graphene bilayers using ab initio density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the ab initio calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2d98e628ea91456e25b0942c0b6aab3730870507

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In Atomic and Molecular Physics, and Optics

1. E. Hwang
2. S. Adam
3. E. Rossi
4. A. Bostwick
5. K. Emtsev
6. T. Seyller
7. J. McChesney
8. Eli Rotenberg

In Materials Chemistry

1. E. Rossi
2. E. Hwang
3. S. Adam
4. T. Seyller
5. A. Bostwick
6. K. Emtsev
7. J. McChesney
8. Eli Rotenberg

Citations in the corpus

• Gate-induced insulating state in bilayer graphene devices. (2007, background): “This is consistent with recent theoretical calculat ions [10,13], which, for zero carrier density and for electric field values of the order of those ach ieved in our experiments, predict a gap size below approximately 10 meV depending on, for instan ce, the way in which screening effects in”
• Symmetry breaking in few layer graphene films (2007, result): “(Similar calculations have also been carried out with ab initio models[51, 52, 25, 26, 53]).”
• Electronic transport in two-dimensional graphene (2010, background): “ving much details, which 6 FIG. 3 (Color online) (a) Energy band of bilayer graphene for V = 0. (b) Enlargment of the energy band close to the neutrality point Kfor dierent values of V. Adapted from Min et al. (2007) can be found in the literature (Ando et al., 1982; Bastard, 1991; Davies, 1998). Th”