Semiconductor-to-metal transition in WO(3-x): Nature of the oxygen vacancy

By Fenggong Wang, C. Di Valentin, Gianfranco Pacchioni. 2011

169 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/2d8ec9cb653409376b2e75e0adef681d3cd25f9a

Citations in the corpus

• Noble metal-comparable SERS enhancement from semiconducting metal oxides by making oxygen vacancies (2015, unknown): “30),respectively, with oxygen vacancy-associated electronic state ( V O ) well separated from the bottom of the CB, located at about 0.5–1.0 eV below the conduction band minimum 31 .”