Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy

By Peter Lauffer, K. Emtsev, R. Graupner, T. Seyller, L. Ley, S. Reshanov, H. B. Weber. 2008

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Electronic properties of graphene-based bilayer systems (2015, background): “Such a behavior of the density of states at small twist angles has been confirmed in STS and STM measurements in Ref.”
Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “S nce LEEM results showed only o ML graph ne on our sampl s, the reports [122,123] which claim that two to three ML of graphene are required for the existence of the three-for-six arrangement cannot be valid.”
Production and processing of graphene and related materials (2020, background): “As we have described before, when measuring SLG at high voltage bias one can normally measure the atomic features of the SiC beneath graphene [1271].”
Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, background): “103 V, a bias that yields clear atomically resolved images on monolayer graphene but at which the buffer layer cannot be imaged [4,8,14,24,26].”
Growth of Epitaxial Graphene: Theory and Experiment (2014, methodology): “To determine the thickness of graphene layers STM observations of the surface have been used [299].”