Long-distance spin transport in high-mobility graphene on hexagonal boron nitride

By P. Zomer, M. Guimarães, N. Tombros, Van Wees. 2012

172 citations recorded by the source corpus.

We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm(2) V-1 s(-1). We could observe spin transport over lengths up to 20 mu m at room temperature, the largest distance measured so far for graphene. Due to enhanced charge-carrier diffusion, spin relaxation lengths are measured up to 4.5 mu m. The relaxation times are similar to values for lower quality SiO2-based devices, around 200 ps. We find that the relaxation rate is determined in almost equal measures by the Elliott-Yafet and D'Yakonov-Perel mechanisms.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2c14d05525c9702a55b8020f704aabe6e7ee058f

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Colloquium : Spintronics in graphene and other two-dimensional materials (2019, methodology): “Recently, hBN has been adapted in graphene spin valves as substrate (Zomer et al., 2012), encapsulating layer (Avsar et al.”