Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

By A. Zhang, L. Rowland, E. Kaminsky, V. Tilak, J. Grande, J. Teetsov, A. Vertiatchikh, L. Eastman. 2003

153 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2b9f261a3f3f5d6a64368501e652226fd7449cce