Mixed-valence impurities in lead telluride-based solid solutions

By B. Volkov, L. Ryabova, D. Khokhlov. 2002

175 citations recorded by the source corpus.

Experimental data on impurity states in narrow-gap lead telluride based semiconductors are summarized. Theoretical models describing the nontrivial properties of such states are presented. Applications to the design of highly sensitive far-infrared detectors are considered.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2b2f13e8f08eba41eeb2c6e8edde28a16ccb719f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Sylvian Cadars
2. Kirill Okhotnikov
3. Thibault Charpentier

In Electrical and Electronic Engineering

1. Sylvian Cadars
2. Kirill Okhotnikov
3. Thibault Charpentier

Citations in the corpus

• Supercell program: a combinatorial structure-generation approach for the local-level modeling of atomic substitutions and partial occupancies in crystals (2016, methodology): “A typical example is the narrow-band semiconductor PbTe, which, when doped with tin, is used as an infra-red detector [46, 47].”