Silicon Carbide Microsystems for Harsh Environments
By M. Wijesundara, R. Azevedo. 2011
185 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/2a8fb325cd6a63a636540211276bfbf01b775238
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In Electrical and Electronic Engineering
- Hoang‐Phuong Phan
- Sima Dimitrijev
- Dzung Viet Dao
- Michael J. Reece
- Min Yu
- R. Mckinnon
- T. Saunders
- K. Nakamura
Citations in the corpus
- The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review (2015, background): “Table I lists the properties of the most common single crystalline SiC poly-types (3C-SiC, 4H-SiC, and 6H-SiC) in comparison to Si, the conventional MEMS material, and other wide energy gap materials such as diamond and GaN [20], [31], [32].”
- Review of flash sintering: Materials, mechanisms and modelling (2017, methodology): “05 eV [105]) was nearly fully densified using FS (configuration similar to”