Origin of p -type doping difficulty in ZnO: The impurity perspective

By C. Park, Shengbai Zhang, Suhuai Wei. 2002

1,094 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/2a7427bc83216698542e49b1e5e1547bcbe78f1f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Chunrui Wang
2. W. Park
3. G. Yi
4. Seong-Ju Park
5. D. Hwang
6. Jang-Won Kang
7. Yong‐Seok Choi
8. K. Ellmer

In Materials Chemistry

1. Chunrui Wang
2. W. Park
3. G. Yi
4. Seong-Ju Park
5. D. Hwang
6. Jang-Won Kang
7. Yong‐Seok Choi
8. K. Ellmer

Citations in the corpus

• Recent Advances in ZnO-Based Light-Emitting Diodes (2010, background): “difficulty in achieving a shallow acceptor level [100].”
• Intrinsic and extrinsic doping of ZnO and ZnO alloys (2016, background): “Park et al continued this work of the Wei group (NREL, Golden, USA) in a systematic DFT study of p-type doping by group-I and V acceptors in ZnO [97].”