Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition
By I. Friel, S. L. Clewes, H. Dhillon, N. Perkins, Daniel J. Twitchen, G. Scarsbrook. 2009
182 citations recorded by the source corpus.
Abstract In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor disc lasers, control over surface and bulk crystalline quality is of great importance. Inductively coupled plasma (ICP) etching using an Ar/Cl gas mixture is demonstrated to remove sub-surface damage of mechanically processed surfaces, whilst maintaining macroscopic planarity and low roughness on a microscopic scale. Dislocations in high quality single crystal CVD diamond are shown to be reduced by using substrates with a combination of low surface damage and low densities of extended defects. Substrates engineered such that only a minority of defects intersect the epitaxial surface are also shown to lead to a reduction in dislocation density. Anisotropy in the birefringence of single crystal CVD diamond due to the preferential direction of dislocation propagation is reported. Ultra low birefringence plates (
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/2a2ddc899622886e8ca4f856ba99b0e9f0901d6a
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In Atomic and Molecular Physics, and Optics
- Mikhail D. Lukin
- M. Markham
- Daniel J. Twitchen
- H. Jeff Kimble
- Darrick E. Chang
- Anders Søndberg Sørensen
- I. Bloch
- Michael J. Hartmann
In Materials Chemistry
Citations in the corpus
- Origins of Diamond Surface Noise Probed by Correlating Single-Spin Measurements with Surface Spectroscopy (2018, background): “remove this strained layer [12,13], but this process is highly anisotropic, and therefore small differences in initial conditions can lead to dramatic differences in final morphology and termination [14,15] (see Appendix E).”