MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap.

By H. Lee, S. Min, Youn-Gyung Chang, Min Kyu Park, Taewook Nam, Hyungjun Kim, J. Kim, S. Ryu, S. Im. Nano letters (Print), 2012

1,288 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/29c32993a8b429e058369a17c729b8d9da86821c

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1. A. Castellanos-Gómez
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Citations in the corpus

• Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. (2012, background): “High electronic quality of the material coupled with thickness dependent optical properties, mechanical flexibility,(9) and access to valley degree of freedom highlights some of the distinct characteristics of atomically thin MoS2.(10-18) Tungsten-based dichalcogenides such as WS2 and WSe2 belong to”