High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

By Kibum Kang, Saien Xie, Lujie Huang, Yimo Han, Pinshane Y. Huang, K. Mak, Cheol‐Joo Kim, D. Muller, Jiwoong Park. Nature, 2015

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Production and processing of graphene and related materials (2020, methodology): “[1140] developed a method to grow a wafer scale polycrystalline 1L-MoS2 films on SiO2/Si with Mo(CO)6 and (C2H5)2S (Diethyl sulfide; DES) with relatively low growth T (~550 °C), albeit with a rather long growth time to achieve a continuous film (~26 h) in low vacuum conditions (7.”
A microprocessor based on a two-dimensional semiconductor (2016, positive): “However, as no metal catalyst is required for the synthesis of TMD ﬁlms 27–30 , direct growth on the target substrate is a promising route to improve yield.”
A roadmap for electronic grade 2D materials (2019, background): “[76] Kang K et al 2015 High-mobility three-atom-thick”
Optoelectronic devices based on two-dimensional transition metal dichalcogenides (2016, methodology): “[65] successfully synthesized 4-inch wafer-scale films of monolayer MoS2 and WS2 with excellent coverage (Fig.”