Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy

By P. Baranov, A. P. Bundakova, A. A. Soltamova, S. Orlinskii, I. Borovykh, R. Zondervan, R. Verberk, Jan Schmidt. 2011

169 citations recorded by the source corpus.

Subfields: Computational Mechanics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/28a2748bdd278b6876fd7429ea2ce1e9fbc15aa8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Audrius Alkauskas
2. Kohei M. Itoh
3. David D. Awschalom
4. C. G. Van de Walle

In Materials Chemistry

1. Stefania Castelletto
2. Audrius Alkauskas
3. Kohei M. Itoh
4. B. Buckley
5. David D. Awschalom
6. Nitin Samarth
7. C. G. Van de Walle
8. A. Boretti

Citations in the corpus

• First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres (2014, background): “The success of the computational methodology developed here provides confidence that it can be fruitfully applied to other systems of high current interest that exhibit a complex vibrational structure of luminescence bands [21–26].”
• Silicon carbide color centers for quantum applications (2020, background): “temperatures as high as 523 K (for selected polytypes [60]) to maintain optical spin polarization [62], [79], and to”
• Materials challenges and opportunities for quantum computing hardware (2021, background): “Color centers in silicon carbide include the NV center ( 210 , 211 ), SiV center ( 212 ), vanadium center ( 213 ), and divacancy ( 214 , 215 ).”