Modeling polycrystalline semiconductor solar cells

By M. Burgelman, P. Nollet, S. Degrave. 2000

1,996 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/27ed56f00beda47069fc7c5e82ae52a55630b312

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. O. Hansen
2. A. Crovetto
3. J. Verschraegen
4. M. Burgelman
5. T. Unold
6. Thomas Feurer
7. S. Siebentritt

In Electrical and Electronic Engineering

1. O. Hansen
2. A. Crovetto
3. J. Verschraegen
4. M. Burgelman
5. Bo Chen
6. A. Tiwari
7. Thomas Feurer
8. D. Hariskos

Citations in the corpus

• What is the band alignment of Cu 2 ZnSn(S,Se) 4 solar cells? (2017, methodology): “Figure 8: Simulated band diagrams of CZTS/CdS heterojunctions in the dark at zero applied voltage, using the program SCAPS [57].”
• Performance optimization of CH3NH3Pb(I1-xBrx)3 based perovskite solar cells by comparing different ETL materials through conduction band offset engineering (2020, methodology): “305) based on Poisson and continuity equations is used [24] to model and simulate the PSC structure.”
• Modeling thin‐film PV devices (2004, methodology): “This numerical simulation program is written and maintained at the University of Gen.3,4 It is designed as a general polycrystalline thin-film device simulator and is mainly used for modeling CdTe- and CIGS/CIS-based solar cells.”
• Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications (2017, methodology): “Solar Cell Capacitance Simulator (SCAPS) [114] simulations by Vermang et al. [109] showed that the surface recombination velocity can be reduced from 104–106 cm s 1 to 102–103 cm s 1 for a CIGS device with local point contacts through an Al2O3 passivation layer at the back contact.”
• Development of rear surface passivated Cu(In,Ga)Se2 thin film solar cells with nano-sized local rear point contacts (2013, methodology): “2) of SCAPS [15,16], a list of parameter values used in the SCAPS modeling can be found in Appendix A.”
• Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films. (2011, methodology): “To further corroborate this correlation between the grading profiles and the observed electronic behaviour of the devices, we carried out simulations using the program SCAPS (refs&#xA”
• Resolving spatial and energetic distributions of trap states in metal halide perovskite solar cells (2020, methodology): “, we used the SCAPS software to simulate the C-ω curves of trap-free perovskite solar cells with both charge transport layers (10).”