Impurities on graphene: Midgap states and migration barriers
By T. Wehling, M. Katsnelson, A. Lichtenstein. 2009
178 citations recorded by the source corpus.
Monovalent impurities on graphene can be divided into ionically and covalently bond impurities. The covalent impurities cause universal midgap states as the carbon atom next to the impurity is effectively decoupled from the graphene pi-bands. The electronic structure of graphene suppresses migration of these impurities and making the universal midgap very stable. This effect is strongest for neutral covalently bond impurities. The ionically bond impurities have migration barriers of typically less than 0.1eV. An asymmetry between anions and cations regarding their adsorption sites and topology of their potential energy landscape is predicted.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/27aa1fa18b0a3398f71c4b4b17222e5ae09cef29
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Citations in the corpus
- Electronic transport in two-dimensional graphene (2010, background): “t al., 2009; Sofo et al., 2007) and other chemical derivatives of graphene is beyond the scope of this work, see e.g. (Bostwick et al., 2009; Cheianov et al., 2009; Geim, 2009; Robinson et al., 2008; Wehling et al., 2009a,b). 2. Eect of strain and corrugations While graphene is often assumed to be a”
- Colloquium: The transport properties of graphene: An introduction (2010, methodology): “It is then the job of quantum chemical calculations to determine the value of the parameters ad and V (Robinson et al., 2008; Wehling et al., 2009, 2010).”